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| SUD50N06-16 New Product Vishay Siliconix N-Channel 60-V (D-S) 175_C MOSFET PRODUCT SUMMARY VDS (V) 60 FEATURES D TrenchFETr Power MOSFET ID (A)c 50 rDS(on) (W) 0.016 @ VGS = 10 V APPLICATIONS D Automotive - ABS - EPS - Motor Drives D Industrial TO-252 D Drain Connected to Tab G D S G Top View Ordering Information: SUD50N06-16 S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 175_C)b Pulsed Drain Current Continuous Source Current (Diode Conduction) Avalanche Current, Single Pulse Avalanche Energy Maximum Power Dissipation Operating Junction and Storage Temperature Range L = 0.1 mH TC = 25_C TA = 25_C TC = 25_C TC = 125_C Symbol VDS VGS ID IDM IS IAS EAS PD TJ, Tstg Limit 60 "20 50c 28 100 50c 35 61 88b 3a - 55 to 175 Unit V A mJ W _C THERMAL RESISTANCE RATINGS Parameter Junction-to-Ambienta J ti t A bi t Junction-to-Case t v 10 sec Steady State Symbol RthJA RthJC Typical 20 40 1.4 Maximum 25 50 1.7 Unit _C/W C/W Notes a. Surface Mounted on 1" x1" FR4 Board. b. See SOA curve for voltage derating. c. Calculate continuous current based on maximum allowable junction temperature when using infinite heat sink. Package limitation current is 50 A. Document Number: 72396 S-31921--Rev. A, 15-Sep-03 www.vishay.com 1 SUD50N06-16 Vishay Siliconix New Product SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage V(BR)DSS VGS(th) IGSS VGS = 0 V, ID = 250 mA VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "20 V VDS = 60 V, VGS = 0 V Zero Gate Voltage Drain Current g On-State Drain Currentb IDSS ID(on) VDS = 60 V, VGS = 0 V, TJ = 125_C VDS = 60 V, VGS = 0 V, TJ = 175_C VDS = 5 V, VGS = 10 V VGS = 10 V, ID = 20 A Drain-Source On-State Resistanceb Forward Transconductanceb rDS(on) gfs VGS = 10 V, ID = 20 A, TJ = 125_C VGS = 10 V, ID = 20 A, TJ = 175_C VDS = 15 V, ID = 20 A 20 50 0.0128 0.016 0.027 0.032 S W 60 2.0 4.0 "100 1 50 250 A m mA V nA Symbol Test Condition Min Typa Max Unit Dynamica Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Chargec Gate-Source Chargec Gate-Drain Chargec Turn-On Delay Timec Rise Timec Ciss Coss Crss Rg Qg Qgs Qgd td(on) tr td(off) tf VDD = 30 V, RL = 0.6 W ID ^ 50 A, VGEN = 10 V, RG = 2.5 W VDS = 30 V, VGS = 10 V, ID = 50 A , , f = 1 MHz VGS = 0 V, VDS = 25 V, F = 1 MHz 2100 300 125 1.7 30 11 8 10 12 20 10 15 20 30 15 ns 45 nC W pF Turn-Off Delay Timec Fall Timec Source-Drain Diode Ratings and Characteristic (TC = 25_C) Pulsed Current Diode Forward Voltageb Source-Drain Reverse Recovery Time ISM VSD trr IF = 30 A, VGS = 0 V IF = 50 A, di/dt = 100 A/ms 1.0 50 100 1.5 85 A V ns Notes a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width v 300 ms, duty cycle v 2%. c. Independent of operating temperature. www.vishay.com 2 Document Number: 72396 S-31921--Rev. A, 15-Sep-03 SUD50N06-16 New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 100 VGS = 10 thru 7 V 80 I D - Drain Current (A) I D - Drain Current (A) 6V 80 100 Vishay Siliconix Transfer Characteristics 60 60 40 5V 40 TC = 125_C 20 25_C - 55_C 0 20 4V 0 0 2 4 6 8 10 VDS - Drain-to-Source Voltage (V) 0 1 2 3 4 5 6 7 VGS - Gate-to-Source Voltage (V) Transconductance 120 100 g fs - Transconductance (S) 80 125_C 60 40 20 0 0 10 20 30 40 50 60 TC = - 55_C r DS(on)- On-Resistance ( W ) 25_C 0.024 0.020 0.016 0.012 0.008 0.004 0.000 0 On-Resistance vs. Drain Current VGS = 10 V 20 40 60 80 100 ID - Drain Current (A) 3000 2500 C - Capacitance (pF) 2000 1500 1000 500 0 0 10 20 30 40 50 60 VDS - Drain-to-Source Voltage (V) Crss Coss ID - Drain Current (A) 20 VDS = 30 V ID = 50 A Capacitance Gate Charge V GS - Gate-to-Source Voltage (V) Ciss 16 12 8 4 0 0 10 20 30 40 50 60 Qg - Total Gate Charge (nC) Document Number: 72396 S-31921--Rev. A, 15-Sep-03 www.vishay.com 3 SUD50N06-16 Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Junction Temperature 2.5 VGS = 10 V ID = 20 A I S - Source Current (A) TJ = 150_C 100 Source-Drain Diode Forward Voltage r DS(on)- On-Resistance ( W ) (Normalized) 2.0 1.5 10 TJ = 25_C 1.0 0.5 0.0 - 50 - 25 0 25 50 75 100 125 150 175 1 0 0.3 0.6 0.9 1.2 VSD - Source-to-Drain Voltage (V) TJ - Junction Temperature (_C) THERMAL RATINGS Maximum Avalanche Drain Current vs. Case Temperature 60 50 I D - Drain Current (A) 40 30 20 10 0 0 25 50 75 100 125 150 175 TC - Case Temperature (_C) 2 1 Normalized Effective Transient Thermal Impedance I D - Drain Current (A) Limited by Package 100 1000 Safe Operating Area Limited by rDS(on) 10 ms 100 ms 1 ms 10 ms 1 TC = 25_C Single Pulse 100 ms dc 10 0.1 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) Normalized Thermal Transient Impedance, Junction-to-Ambient Duty Cycle = 0.5 0.2 0.1 0.1 0.02 0.05 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 1 10 100 1000 Square Wave Pulse Duration (sec) www.vishay.com 4 Document Number: 72396 S-31921--Rev. A, 15-Sep-03 SUD50N06-16 New Product THERMAL RATINGS 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 Vishay Siliconix Normalized Thermal Transient Impedance, Junction-to-Case 0.1 0.02 0.05 Single Pulse 0.1 0.01 10 -4 10 -3 10 -2 10 -1 Square Wave Pulse Duration (sec) 1 10 100 Document Number: 72396 S-31921--Rev. A, 15-Sep-03 www.vishay.com 5 |
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